Samsung 990 Pro 2tb Nvme Pcie 4.0 M.2 2280 (Mz-V9p2t0b/Am)

Samsung 990 Pro 2TB NVMe PCIe 4.0 SSD is a high-performance internal storage solution engineered for demanding users, including gamers, content creators, and professionals. Built on PCIe 4.0 technology, it delivers exceptional speed, efficiency, and reliability for intensive workloads such as 4K video editing, 3D rendering, and high-end gaming. With Samsung’s advanced V-NAND technology and intelligent thermal control, this SSD ensures consistent performance, low latency, and long-term durability in compact M.2 2280 form factor systems.

Product Features

Ultra-Fast PCIe 4.0 Performance

Delivers sequential read speeds of up to 7,450 MB/s and write speeds up to 6,900 MB/s for rapid data access and transfer.

High 2TB Storage Capacity

Provides ample space for operating systems, applications, games, and large project files in a single compact drive.

Advanced Samsung V-NAND Technology

Utilizes high-quality 3-bit MLC (TLC) V-NAND for improved efficiency, endurance, and consistent performance.

Intelligent Thermal Control

Features an in-house controller with heat management technology to maintain stable performance under heavy workloads.

Compact M.2 2280 Form Factor

Designed for modern desktops and laptops with M.2 slots, ensuring easy installation and space-saving integration.

Enhanced Random Performance

Improves system responsiveness with high IOPS performance, making multitasking and application loading faster.

Built for Gaming and Professional Workloads

Optimized for high-performance computing, including gaming, video editing, and data-intensive applications.

Reliable Data Protection Features

Supports TRIM, S.M.A.R.T monitoring, and AES 256-bit hardware encryption for secure and efficient data management.

Product Specifications

• Model: MZ-V9P2T0B/AM
• Storage Capacity: 2TB
• Form Factor: M.2 2280
• Interface: PCIe Gen 4.0 x4, NVMe 2.0
• NAND Type: Samsung V-NAND 3-bit MLC (TLC)
• Controller: Samsung in-house controller
• Cache Memory: 2GB LPDDR4

Performance

• Sequential Read Speed: Up to 7,450 MB/s
• Sequential Write Speed: Up to 6,900 MB/s
• Random Read (4KB): Up to 1,400,000 IOPS
• Random Write (4KB): Up to 1,550,000 IOPS

Endurance and Reliability

• Total Bytes Written (TBW): 1,200 TB
• MTBF: 1.5 million hours

Power and Environmental

• Average Power Consumption: Approx. 5.5 W
• Maximum Power Consumption: Approx. 8.5 W
• Idle Power Consumption: Max 55 mW
• Operating Temperature: 0°C to 70°C
• Voltage: 3.3 V ± 5%

Physical Characteristics

• Dimensions: 80 × 22 × 2.3 mm
• Weight: Approx. 9 g