Samsung 4tb 990 Pro Pcie 4.0 X4 M.2 Internal Nvme Ssd
Samsung 990 Pro 4TB NVMe PCIe 4.0 SSD is a flagship high-capacity storage solution built for professionals, gamers, and power users who require extreme speed and large storage in a compact form factor. Leveraging PCIe Gen 4.0 technology, it delivers exceptional performance for data-intensive tasks such as 4K and 8K video editing, high-end gaming, and large-scale file transfers. With Samsungβs advanced V-NAND technology, intelligent controller, and optimized power efficiency, this SSD ensures consistent performance, reliability, and long-term durability for demanding workloads.
Product Features
Massive 4TB Storage Capacity
Offers extensive storage space for large media files, games, applications, and professional projects in a single drive.
Ultra-Fast PCIe Gen 4.0 Performance
Achieves sequential read speeds up to 7,450 MB/s and write speeds up to 6,900 MB/s for rapid data access and transfer.
High Random IOPS Performance
Supports up to 1,600,000 IOPS read and 1,550,000 IOPS write, ensuring smooth multitasking and fast application responsiveness.
Advanced Samsung V-NAND Technology
Utilizes high-quality TLC V-NAND for improved efficiency, endurance, and consistent performance under heavy workloads.
Intelligent Thermal and Power Management
Optimized controller design helps manage heat and power consumption, maintaining stable performance during intensive operations.
Compact M.2 2280 Form Factor
Fits easily into modern desktops and laptops with M.2 slots, offering a space-saving high-performance upgrade.
Enhanced Data Security Features
Includes AES 256-bit encryption, TRIM, and S.M.A.R.T support for secure and efficient data management.
Samsung Magician Software Support
Provides tools for performance monitoring, firmware updates, and drive optimization.
Product Specifications
- Model: Samsung 990 Pro
- Storage Capacity: 4TB
- Form Factor: M.2 2280
- Interface: PCIe Gen 4.0 x4, NVMe 2.0
- NAND Type: Samsung V-NAND TLC
- Controller: Samsung in-house controller
- Cache Memory: 4GB LPDDR4
Performance
- Sequential Read Speed: Up to 7,450 MB/s
- Sequential Write Speed: Up to 6,900 MB/s
- Random Read (4KB, QD32): Up to 1,600,000 IOPS
- Random Write (4KB, QD32): Up to 1,550,000 IOPS
- Random Read (QD1): Up to 22,000 IOPS
- Random Write (QD1): Up to 80,000 IOPS
Power and Environmental
- Average Power Consumption: Approx. 6.5 W
- Maximum Power Consumption: Approx. 8.6 W
- Idle Power Consumption: Max 55 mW
- Operating Temperature: 0Β°C to 70Β°C
- Voltage: 3.3 V Β± 5%
Reliability and Durability
- MTBF: 1.5 million hours
- Shock Resistance: 1,500 G, 0.5 ms
- Endurance: Up to 2,400 TBW
Physical Characteristics
- Dimensions: 80 Γ 22 Γ 2.3 mm
- Weight: Up to 9 g




Reviews
There are no reviews yet.