Samsung – 990 Pro 1tb Internal SSD Pcie Gen 4 Nvme Heat Sink
Samsung 990 Pro 1TB NVMe PCIe 4.0 SSD with Heatsink is a high-performance internal storage solution designed for gaming, content creation, and demanding computing tasks. Engineered with PCIe Gen 4.0 technology, it delivers ultra-fast speeds and exceptional responsiveness, making it ideal for high-end PCs and compatible game consoles. The integrated heatsink ensures efficient thermal management, maintaining peak performance during intensive workloads while enhancing system stability and longevity.
Product Features
Ultra-Fast PCIe Gen 4.0 Performance
Delivers blazing-fast sequential read speeds of up to 7,450 MB/s and write speeds up to 6,900 MB/s for rapid data access and file transfers.
Integrated Heatsink for Thermal Control
Built-in heatsink effectively dissipates heat, preventing thermal throttling and ensuring consistent high performance during heavy usage.
Optimized for Gaming and High-End PCs
Designed for modern gaming systems and client PCs, providing faster load times and smooth performance in demanding applications.
Advanced Samsung V-NAND Technology
Uses high-quality 3-bit MLC (TLC) V-NAND to deliver improved efficiency, endurance, and long-term reliability.
High-Speed Random Performance
Supports up to 1,200,000 IOPS read and 1,550,000 IOPS write for enhanced multitasking and system responsiveness.
Compact M.2 2280 Form Factor
Fits seamlessly into desktops and laptops with M.2 slots, offering a space-saving and efficient storage upgrade.
Advanced Data Security Features
Includes AES 256-bit encryption, TRIM, and S.M.A.R.T support for secure and optimized data management.
Samsung Magician Software Support
Enables drive monitoring, performance optimization, and firmware updates through Samsungβs management software.
Product Specifications
- Model: Samsung 990 Pro (Heatsink Version)
- Storage Capacity: 1TB
- Form Factor: M.2 2280 (with heatsink)
- Interface: PCIe Gen 4.0 x4, NVMe 2.0
- NAND Type: Samsung V-NAND 3-bit MLC
- Controller: Samsung in-house controller
- Cache Memory: 1GB LPDDR4
Performance
- Sequential Read Speed: Up to 7,450 MB/s
- Sequential Write Speed: Up to 6,900 MB/s
- Random Read (4KB, QD32): Up to 1,200,000 IOPS
- Random Write (4KB, QD32): Up to 1,550,000 IOPS
- Random Read (QD1): Up to 22,000 IOPS
- Random Write (QD1): Up to 80,000 IOPS
Power and Environmental
- Average Power Consumption: Approx. 5.4 W
- Maximum Power Consumption: Approx. 7.8 W
- Idle Power Consumption: Max 50 mW
- Operating Temperature: 0Β°C to 70Β°C
- Voltage: 3.3 V Β± 5%
Reliability and Durability
- MTBF: 1.5 million hours
- Shock Resistance: 1,500 G, 0.5 ms
Physical Characteristics
- Dimensions: 80 Γ 24.3 Γ 8.2 mm (with heatsink)
- Weight: Up to 28 g




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